10 sec steady-state v ds v gs 4.2 3.5 3.3 2.8 i dm 1.4 1.0 0.9 0.64 t j , t stg symbol typ max t 10s 70 90 steady-state 100 125 steady-state r q jl 63 80 junction and storage temperature range r q ja parameter -55 to 150 maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w c/w maximum junction-to-ambient a drain-source voltage absolute maximum ratings t a =25c unless otherwise noted v pulsed drain current b units maximum 30 20 30 v c t a =70c i d continuous drain current a,f t a =25c t a =70c parameter symbol gate-source voltage power dissipation t a =25c a p d w ao3434 30v n-channel mosfet product summary v ds (v) = 30v i d = 4.2a (v gs = 10v) r ds(on) < 52m w (v gs = 10v) r ds(on) < 75m w (v gs = 4.5v) esd protected general description the ao3434 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. it is esd protected. g ds sot23 top view bottom view d g s g s d alpha & omega semiconductor, ltd. www.aosmd.com
ao3434 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 10 ua v gs(th) 1 1.32 1.8 v i d(on) 30 a 43 52 t j =125c 58 74 59 75 m w g fs 8.5 s v sd 0.77 1 v i s 1.8 a c iss 269 340 pf c oss 65 pf c rss 41 pf r g 1 1.5 w q g (10v) 5.7 7.2 nc q g (4.5v) 3 nc q gs 1.37 nc q gd 0.65 nc t d(on) 2.6 3.8 ns t r 5.5 8 ns t d(off) 15.2 23 ns t f 3.7 5.5 ns t rr 15.5 21 ns q rr 7.1 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =4.2a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =4.2a reverse transfer capacitance i f =4.2a, di/dt=100a/ m s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =30v, v gs =0v v ds =0v, v gs = 16v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =4.5v, i d =2a i s =1a,v gs =0v v ds =5v, i d =4.2a total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =3.6 w , r gen =3 w turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =4.2a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. f.the current rating is based on the t 10s thermal resistance rating. rev3:nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com
ao3434 typical electrical and thermal characteristics this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 4.5v 6v 10v 8v 4v 0 3 6 9 12 15 0 1 2 3 4 5 6 v gs (volts) figure 2: transfer characteristics i d (a) 30 40 50 60 70 80 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v id=4.2a v gs =4.5v id=3.5a 30 42 54 66 78 90 102 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =4.2a 25c 125c 3.5v alpha & omega semiconductor, ltd. www.aosmd.com
ao3434 typical electrical and thermal characteristics this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 0 1 2 3 4 5 6 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss v ds =15v i d =4.2a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =125c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1m 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 m 10s alpha & omega semiconductor, ltd. www.aosmd.com
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